RF-THz Integrated Circuits

RF-THz Integrated Circuits

Design and development of high-performance integrated circuits for instrumentation, communications, and sensing applications spanning RF to THz frequencies.

Expertise includes SiGe, Si CMOS, GaAs, GaN, and InP processes. Research emphasizes circuit techniques that deliver high linearity, high power, high efficiency, low noise, and wide bandwidth. Innovative design approaches enable integrated circuits in emerging semiconductor processes to achieve unprecedented performance.

Current research topics

  • Highly linear, high-efficiency, wide-bandwidth power amplifiers
  • Highly linear mixers and multipliers
  • Low phase-noise millimeter-wave oscillators

Research overview

Download RF-THz integrated circuits research overview (PDF file) 

Related publications

  1. N. L. K. Nguyen; B. Nguyen; T. Omori; D. P. Nguyen; R. Moroney; S. D’Agostino; W. Kennan; A. Pham. “A Wideband SiGe Power Amplifier Using Modified Triple Stacked-HBT Cell.” IEEE Microwave and Wireless Components Letters, vol. 31, no. 1, pp. 52–55, Dec. 2020.
  2. N. L. K. Nguyen; N. Killeen; D. P. Nguyen; A. N. Stameroff; A. Pham. “A Wideband Gain Enhancement Technique for Distributed Amplifiers.” IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 9, pp. 3697–3708, 2020.
  3. D. Nguyen; N. L. K. Nguyen; A. Stameroff; V. Camarchia; M. Pirola; A. Pham. “A Wideband Highly Linear Distributed Amplifier Using Intermodulation Cancellation Technique for Stacked-HBT Cell.” IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 7 part 2, pp. 2984–2997, 2020.
  4. N. L. K. Nguyen; D. Nguyen; A. Stameroff; A. Pham. “A 1–160 GHz InP Distributed Amplifier Using 3-D Interdigital Capacitors.” IEEE Microwave and Wireless Components Letters, vol. 30, no. 5, pp. 492–495, 2020.
  5. Thuy T. Nguyen; Kohei Fujii; A. Pham. “A 4–20 GHz, Multi-Watt Level, Fully-Integrated Push-Pull Distributed Power Amplifier with Wideband Even-Order Harmonic Suppression.” IET Microwaves, Antennas & Propagation, vol. 13, no. 13, pp. 2279–2283, 2019.
  6. Duy P. Nguyen; Binh L. Pham; A. Pham. “A Compact Ka-Band Integrated Doherty Amplifier With Reconfigurable Input Network.” IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 1, pp. 205–215, Jan. 2019.
  7. Duy P. Nguyen; Thanh Pham; A. Pham. “A 28-GHz Symmetrical Doherty Power Amplifier Using Stacked-FET Cells.” IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 6, pp. 2628–2637, June 2018.
  8. Duy P. Nguyen; Jeffery Curtis; A. Pham. “A Doherty Amplifier with Modified Load Modulation Scheme Based on Load–Pull Data.” IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 1, pp. 227–236, Jan. 2018.
  9. Thuy T. Nguyen; Kohei Fujii; A. Pham. “Highly Linear Distributed Mixer in 0.25‑Enhancement‑Mode GaAs pHEMT Technology.” IEEE Microwave and Wireless Components Letters, vol. 27, no. 12, pp. 116–118, Dec. 2017.
  10. Duy P. Nguyen; Binh L. Pham; A. Pham. “A 1.5–45-GHz High-Power 2-D Distributed Voltage-Controlled Attenuator.” IEEE Transactions on Microwave Theory and Techniques, vol. 65, no. 11, pp. 4208–4217, Nov. 2017.